| PART |
Description |
Maker |
| PD46184184BF1-E40-EQ1 PD46185084BF1-E40-EQ1 PD4618 |
18M-BIT DDR II SRAM 4-WORD BURST OPERATION
18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| B67385 B67385P B67385G0000X187U EPCOSAG-B67385P000 |
Ferrites and accessories UU 126/182/20, UI 126/119/20 Core set 铁氧体及配件支原26/182/20，用户界26/119/20核心
|
EPCOS AG
|
| ADSP-BF537BBCZ-5A1 ADSP-BF536BBCZ-4A1 ADSP-BF536BB |
16-BIT, 40 MHz, OTHER DSP, PBGA182 LEAD FREE, MO-205AE, MBGA-182
16-BIT, 40 MHz, OTHER DSP, PBGA208 LEAD FREE, MO-205AM, MBGA-208
16-BIT, 40 MHz, OTHER DSP, PBGA182 MO-205AE, MBGA-182
|
Analog Devices, Inc.
|
| ADSP-BF534BBCZ-4B1 ADSP-BF534BBCZ-5A1 ADSP-BF534BB |
16-BIT, 50 MHz, OTHER DSP, PBGA208 LEAD FREE, MO-205AM, MBGA-208
16-BIT, 50 MHz, OTHER DSP, PBGA182 LEAD FREE, MO-205AE, MBGA-182
16-BIT, 50 MHz, OTHER DSP, PBGA182 MO-205AE, MBGA-182
|
Analog Devices, Inc.
|
| UPD44164364F5-E60-EQ1 UPD44164084 UPD44164084F5-E4 |
18M-BIT DDRII SRAM 4-WORD BURST OPERATION
|
NEC[NEC]
|
| UPD44164365F5-E50-EQ1 |
18M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION 1800万位条DDRII SRAM的分离I / O 2字爆发运
|
NEC, Corp.
|
| MDU10N180 |
Single N-channel Trench MOSFET 100V, 40A, 18m(ohm)
|
MagnaChip Semiconductor...
|
| MV2105ZL1 MV2101ZL1 |
15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 PLASTIC, CASE 182-06, TO-226AC, 2 PIN
6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 PLASTIC, CASE 182-06, TO-226AC, 2 PIN
|
ON Semiconductor
|
| MV209ZL1 MV209RL MV209RL1 |
VHF BAND, 29 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 CASE 182-06, TO-226AC, 2 PIN
|
ON Semiconductor
|
| 0923151818 SD-92315-001 |
Picoflex PF-50 IDT-to-IDT, 18 Circuits, 0.18m (7.09) Length
Picoflex PF-50 IDT-to-IDT, 18 Circuits, 0.18m (7.09") Length
|
Molex Electronics Ltd.
|
| 0923150418 |
Picoflex PF-50 IDT-to-IDT, 4 Circuits, 0.18m (7.09) Length
|
Molex Electronics Ltd.
|
|
